Properties of Au/oxide/InP metal-interfacial layer-semiconductor junctions

Properties of Au/oxide/InP metal-interfacial layer-semiconductor junctions

The properties of Au/thermal oxide/p-InP metal-interfacial layer-semiconductor (MIS) junctions have been investigated. Thin InP thermal oxides are stable and in the dark are positively charged so as to increase the band bending and reduce the forward leakage currents in MIS junctions. Under illumina...

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Veröffentlicht in:J. Appl. Phys.; (United States) 1985-09, Vol.58 (5), p.1876-1885
Hauptverfasser: EBERSPACHER, C, FAHRENBRUCH, A. L, BUBE, R. H
Format: Artikel
Sprache:eng
Schlagworte:
360603 - Materials- Properties
Applied sciences
CHALCOGENIDES
ELECTRICAL PROPERTIES
ELECTRONIC STRUCTURE
Electronics
ELEMENTS
EMISSION
Exact sciences and technology
GOLD
HIGH TEMPERATURE
HYSTERESIS
INDIUM COMPOUNDS
INDIUM OXIDES
INDIUM PHOSPHIDES
INTERFACES
JUNCTIONS
MATERIALS SCIENCE
METALS
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOSPHORUS OXIDES
PHOTOELECTRIC EFFECT
PHOTOELECTROMAGNETIC EFFECTS
PHOTOEMISSION
PHYSICAL PROPERTIES
PNICTIDES
SECONDARY EMISSION
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SEMICONDUCTOR JUNCTIONS
TRANSITION ELEMENTS
TRAPPING
VERY HIGH TEMPERATURE
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Beschreibung
Zusammenfassung:The properties of Au/thermal oxide/p-InP metal-interfacial layer-semiconductor (MIS) junctions have been investigated. Thin InP thermal oxides are stable and in the dark are positively charged so as to increase the band bending and reduce the forward leakage currents in MIS junctions. Under illumination, photogenerated electrons are trapped in the oxide or near the oxide/InP interface such that MIS junctions exhibit photosuppression and hysteresis effects.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.335991