Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy

We report the first observation of stimulated emission (16 K) in material grown by atomic layer epitaxy (ALE). The active region of our laser structure consists of six strained InAs quantum wells (6.6 Å thick, 7.4% strain) separated by 500 Å of GaAs, which makes these the thinnest and most highly st...

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Veröffentlicht in:	Applied physics letters 1987-05, Vol.50 (18), p.1266-1268
Hauptverfasser:	TISCHLER, M. A, ANDERSON, N. G, KOLBAS, R. M, BEDAIR, S. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
Online-Zugang:	Volltext
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