Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy

Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy

We report the first observation of stimulated emission (16 K) in material grown by atomic layer epitaxy (ALE). The active region of our laser structure consists of six strained InAs quantum wells (6.6 Å thick, 7.4% strain) separated by 500 Å of GaAs, which makes these the thinnest and most highly st...

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Veröffentlicht in:Applied physics letters 1987-05, Vol.50 (18), p.1266-1268
Hauptverfasser: TISCHLER, M. A, ANDERSON, N. G, KOLBAS, R. M, BEDAIR, S. M
Format: Artikel
Sprache:eng
Schlagworte:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Zusammenfassung:We report the first observation of stimulated emission (16 K) in material grown by atomic layer epitaxy (ALE). The active region of our laser structure consists of six strained InAs quantum wells (6.6 Å thick, 7.4% strain) separated by 500 Å of GaAs, which makes these the thinnest and most highly strained quantum wells ever reported to support stimulated emission. These results demonstrate that the ALE process can be used to grow laser quality material with highly reproducible layer thickness.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97879