Photoelectron and electron energy loss spectra of epitaxial aluminum nitride
The valence bands of epitaxial layers of A1N were studied by ultraviolet photoelectron spectroscopy and electron energy loss spectroscopy. A self-consistent band structure was calculated and the resultant density of states compared with the UPS spectra. Qualitative agreement was good, with discrepan...
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Veröffentlicht in: | Solid state communications 1985-01, Vol.56 (1), p.35-37 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The valence bands of epitaxial layers of A1N were studied by ultraviolet photoelectron spectroscopy and electron energy loss spectroscopy. A self-consistent band structure was calculated and the resultant density of states compared with the UPS spectra. Qualitative agreement was good, with discrepancies arising primarily from the neglect of dipole matrix elements. |
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ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/0038-1098(85)90528-9 |