Photoelectron and electron energy loss spectra of epitaxial aluminum nitride

The valence bands of epitaxial layers of A1N were studied by ultraviolet photoelectron spectroscopy and electron energy loss spectroscopy. A self-consistent band structure was calculated and the resultant density of states compared with the UPS spectra. Qualitative agreement was good, with discrepan...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Solid state communications 1985-01, Vol.56 (1), p.35-37
Hauptverfasser: Olson, C.G., Sexton, J.H., Lynch, D.W., Bevolo, A.J., Shanks, H.R., Harmon, B.N., Ching, W.Y., Wieliczka, D.M.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The valence bands of epitaxial layers of A1N were studied by ultraviolet photoelectron spectroscopy and electron energy loss spectroscopy. A self-consistent band structure was calculated and the resultant density of states compared with the UPS spectra. Qualitative agreement was good, with discrepancies arising primarily from the neglect of dipole matrix elements.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(85)90528-9