Extrinsic Photoconduction Induced Short‐Wavelength Infrared Photodetectors Based on Ge‐Based Chalcogenides

2D layered photodetectors have been widely researched for intriguing optoelectronic properties but their application fields are limited by the bandgap. Extending the detection waveband can significantly enrich functionalities and applications of photodetectors. For example, after breaking through bandgap limitation, extrinsic Si photodetectors are used for short‐wavelength infrared or even long‐wavelength infrared detection. Utilizing extrinsic photoconduction to extend the detection waveband of 2D layered photodetectors is attractive and desirable. However, extrinsic photoconduction has yet not been observed in 2D layered materials. Here, extrinsic photoconduction‐induced short‐wavelength infrared photodetectors based on Ge‐based chalcogenides are reported for the first time and the effectiveness of intrinsic point defects are demonstrated. The detection waveband of room‐temperature extrinsic GeSe photodetectors with the assistance of Ge vacancies is broadened to 1.6 µm. Extrinsic GeSe photodetectors have an excellent external quantum efficiency (0.5%) at the communication band of 1.31 µm and polarization‐resolved capability to subwaveband radiation. Moreover, room‐temperature extrinsic GeS photodetectors with a detection waveband to the communication band of 1.55 µm further verify the versatility of intrinsic point defects. This approach provides design strategies to enrich the functionalities of 2D layered photodetectors. 2D layered photodetectors have been widely researched for intriguing optoelectronic properties. Utilizing extrinsic photoconduction to extend their detection waveband can significantly enrich functionalities and applications. Here, extrinsic photoconduction‐induced short‐wavelength infrared photodetectors based on Ge‐based chalcogenides are reported. This approach provides design strategies to enrich the functionalities of 2D layered photodetectors.