Phosphorus diffusion using spin-on phosphosilicate-glass source and halogen lamps

Formation of phosphorus-diffused layers using spin-on phosphosilicate glass (SOPSG) source and rapid isothermal halogen lamp annealing (HL A) were investigated with respect to sheet resistivities, junction de pths, carrier concentrations, and contact resistances. Higher HLA tem perature and SOPSG phosphorus weight percent results in lower average resistivities (sheet resistivity x junction depth). With a 1205 degree C, 2s HLA using 37.5 w/o SOPSG, a shallow junction (junction depth = 0.2 3 mu m) with low resistivity (37.7 Omega / square ) was achieved. Carrier concen tration profiles of phosphorus-diffused layers formed by 1205 degree C HLA using 37.5 w/o SOPSG have very abrupt shapes and can be expressed by a function of x/ square root t, where x is the depth and t is the HLA soak time. They have almost the same maximum carrier concentration and the same contact resistnce as the phosphorus-doped layer formed by super(i31)P ion implantation and HLA