Studies of the interaction of dislocations with point defects in germanium by means of irradiation in a high-voltage electron microscope

The interaction of point defects with dislocations and interstitial type dislocation loops is studied, generated by electron irradiation of Ge crystals in a high‐voltage electron microscope. The investigation of the dislocation climb kinetics as a function of the irradiation conditions indicates that at temperatures between 290 and 470 K the interaction is limited by the insertion of point defects into lattice sites in the dislocation core. In the temperature range of 470 to 670 K the peculiarities of climb of a perfect dislocation are due to the interaction of point defects with partial dislocations in a core of perfect ones. Interaction conditions for dislocations with vacancies and the contribution of self‐diffusion processes with increasing irradiation temperature are under discussion. [Russian Text Ignored].