Surface-emitting laser diode with vertical GaAs/GaAlAs quarter-wavelength multilayers and lateral buried heterostructure

Threshold current of 2 mA at room temperature cw operation is realized in a vertical distributed feedback surface-emitting laser diode with lateral buried heterostructure (LBH). In this LBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded wit...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1987-11, Vol.51 (21), p.1655-1657
Hauptverfasser:	OGURA, M, WEI HSIN, MING-CHIANG WU, SHYH WANG, WHINNERY, J. R, WANG, S. C, YANG, J. J
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CURRENTS DATA ELECTRIC CURRENTS ENGINEERING Exact sciences and technology EXPERIMENTAL DATA Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS HETEROJUNCTIONS INFORMATION JUNCTIONS LASERS LAYERS NUMERICAL DATA OPERATION Optics Physics PNICTIDES SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS 420300 > Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS Semiconductor lasers laser diodes THRESHOLD CURRENT
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!