Surface-emitting laser diode with vertical GaAs/GaAlAs quarter-wavelength multilayers and lateral buried heterostructure

Surface-emitting laser diode with vertical GaAs/GaAlAs quarter-wavelength multilayers and lateral buried heterostructure

Threshold current of 2 mA at room temperature cw operation is realized in a vertical distributed feedback surface-emitting laser diode with lateral buried heterostructure (LBH). In this LBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded wit...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1987-11, Vol.51 (21), p.1655-1657
Hauptverfasser: OGURA, M, WEI HSIN, MING-CHIANG WU, SHYH WANG, WHINNERY, J. R, WANG, S. C, YANG, J. J
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ENGINEERING
Exact sciences and technology
EXPERIMENTAL DATA
Fundamental areas of phenomenology (including applications)
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
LAYERS
NUMERICAL DATA
OPERATION
Optics
Physics
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS 420300 > Engineering-- Lasers-- (-1989)
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
THRESHOLD CURRENT
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Beschreibung
Zusammenfassung:Threshold current of 2 mA at room temperature cw operation is realized in a vertical distributed feedback surface-emitting laser diode with lateral buried heterostructure (LBH). In this LBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded with n- and p-type AlGaAs cladding layers for minority-carrier confinement. The far-field angle is 7°. The beam shape is nearly circular. However, the lasing spectrum is broad (2–3 nm) compared with the conventional edge-emitting laser. Major differences between the surface-emitting laser diode presented here and the conventional edge-emitting laser diode are discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.98586