Surface-emitting laser diode with vertical GaAs/GaAlAs quarter-wavelength multilayers and lateral buried heterostructure
Threshold current of 2 mA at room temperature cw operation is realized in a vertical distributed feedback surface-emitting laser diode with lateral buried heterostructure (LBH). In this LBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded wit...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1987-11, Vol.51 (21), p.1655-1657 |
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| container_end_page | 1657 |
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| container_issue | 21 |
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| container_title | Appl. Phys. Lett.; (United States) |
| container_volume | 51 |
| creator | OGURA, M WEI HSIN MING-CHIANG WU SHYH WANG WHINNERY, J. R WANG, S. C YANG, J. J |
| description | Threshold current of 2 mA at room temperature cw operation is realized in a vertical distributed feedback surface-emitting laser diode with lateral buried heterostructure (LBH). In this LBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded with n- and p-type AlGaAs cladding layers for minority-carrier confinement. The far-field angle is 7°. The beam shape is nearly circular. However, the lasing spectrum is broad (2–3 nm) compared with the conventional edge-emitting laser. Major differences between the surface-emitting laser diode presented here and the conventional edge-emitting laser diode are discussed. |
| doi_str_mv | 10.1063/1.98586 |
| format | Article |
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R ; WANG, S. C ; YANG, J. J</creator><creatorcontrib>OGURA, M ; WEI HSIN ; MING-CHIANG WU ; SHYH WANG ; WHINNERY, J. R ; WANG, S. C ; YANG, J. J ; Department of Electrical Engineering and Computer Science, and Electronics Research Laboratory, University of California, Berkeley, California 94720</creatorcontrib><description>Threshold current of 2 mA at room temperature cw operation is realized in a vertical distributed feedback surface-emitting laser diode with lateral buried heterostructure (LBH). In this LBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded with n- and p-type AlGaAs cladding layers for minority-carrier confinement. The far-field angle is 7°. The beam shape is nearly circular. However, the lasing spectrum is broad (2–3 nm) compared with the conventional edge-emitting laser. Major differences between the surface-emitting laser diode presented here and the conventional edge-emitting laser diode are discussed.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.98586</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>ALUMINIUM ARSENIDES ; ALUMINIUM COMPOUNDS ; ARSENIC COMPOUNDS ; ARSENIDES ; CURRENTS ; DATA ; ELECTRIC CURRENTS ; ENGINEERING ; Exact sciences and technology ; EXPERIMENTAL DATA ; Fundamental areas of phenomenology (including applications) ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; HETEROJUNCTIONS ; INFORMATION ; JUNCTIONS ; LASERS ; LAYERS ; NUMERICAL DATA ; OPERATION ; Optics ; Physics ; PNICTIDES ; SEMICONDUCTOR DEVICES ; SEMICONDUCTOR JUNCTIONS 420300 -- Engineering-- Lasers-- (-1989) ; SEMICONDUCTOR LASERS ; Semiconductor lasers; laser diodes ; THRESHOLD CURRENT</subject><ispartof>Appl. Phys. Lett.; (United States), 1987-11, Vol.51 (21), p.1655-1657</ispartof><rights>1988 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c310t-48bf874ab6b290a8050cd83c9623c9aa83a1a12b146d9988014a12dc838ee7123</citedby><cites>FETCH-LOGICAL-c310t-48bf874ab6b290a8050cd83c9623c9aa83a1a12b146d9988014a12dc838ee7123</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7806023$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/6039905$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>OGURA, M</creatorcontrib><creatorcontrib>WEI HSIN</creatorcontrib><creatorcontrib>MING-CHIANG WU</creatorcontrib><creatorcontrib>SHYH WANG</creatorcontrib><creatorcontrib>WHINNERY, J. R</creatorcontrib><creatorcontrib>WANG, S. C</creatorcontrib><creatorcontrib>YANG, J. J</creatorcontrib><creatorcontrib>Department of Electrical Engineering and Computer Science, and Electronics Research Laboratory, University of California, Berkeley, California 94720</creatorcontrib><title>Surface-emitting laser diode with vertical GaAs/GaAlAs quarter-wavelength multilayers and lateral buried heterostructure</title><title>Appl. Phys. Lett.; (United States)</title><description>Threshold current of 2 mA at room temperature cw operation is realized in a vertical distributed feedback surface-emitting laser diode with lateral buried heterostructure (LBH). In this LBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded with n- and p-type AlGaAs cladding layers for minority-carrier confinement. The far-field angle is 7°. The beam shape is nearly circular. However, the lasing spectrum is broad (2–3 nm) compared with the conventional edge-emitting laser. Major differences between the surface-emitting laser diode presented here and the conventional edge-emitting laser diode are discussed.</description><subject>ALUMINIUM ARSENIDES</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>CURRENTS</subject><subject>DATA</subject><subject>ELECTRIC CURRENTS</subject><subject>ENGINEERING</subject><subject>Exact sciences and technology</subject><subject>EXPERIMENTAL DATA</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>HETEROJUNCTIONS</subject><subject>INFORMATION</subject><subject>JUNCTIONS</subject><subject>LASERS</subject><subject>LAYERS</subject><subject>NUMERICAL DATA</subject><subject>OPERATION</subject><subject>Optics</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR JUNCTIONS 420300 -- Engineering-- Lasers-- (-1989)</subject><subject>SEMICONDUCTOR LASERS</subject><subject>Semiconductor lasers; laser diodes</subject><subject>THRESHOLD CURRENT</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNo9kU9LAzEQxYMoWKv4FRYRPa1ONvsneyyiVSh4UM9hNjtrI-lum2St_fZGK15mePCbN8wbxs453HAoxS2_qWUhywM24VBVqeBcHrIJAIi0rAt-zE68_4iyyISYsK-X0XWoKaWVCcH074lFTy5pzdBSsjVhmXySC0ajTeY487ex2JlPNiO6QC7d4idZ6t8jtxptMBZ35HyCfRuNIhDHmtEZapMlRTn44EYdRken7KhD6-nsr0_Z28P9691junieP93NFqkWHEKay6aTVY5N2WQ1oIQCdCuFrsssFkQpkCPPGp6XbV1LCTyPstVSSKKKZ2LKLva-cbVRXptAeqmHvicdVAmirqGI0NUeWrthM5IPamW8Jmuxp2H0KssryKvqx-16D-p4infUqbUzK3Q7xUH9xK-4-o0_kpd_luhjeJ3DXhv_j1cSSogf-AaDR4Td</recordid><startdate>19871123</startdate><enddate>19871123</enddate><creator>OGURA, M</creator><creator>WEI HSIN</creator><creator>MING-CHIANG WU</creator><creator>SHYH WANG</creator><creator>WHINNERY, J. R</creator><creator>WANG, S. C</creator><creator>YANG, J. J</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19871123</creationdate><title>Surface-emitting laser diode with vertical GaAs/GaAlAs quarter-wavelength multilayers and lateral buried heterostructure</title><author>OGURA, M ; WEI HSIN ; MING-CHIANG WU ; SHYH WANG ; WHINNERY, J. R ; WANG, S. C ; YANG, J. J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c310t-48bf874ab6b290a8050cd83c9623c9aa83a1a12b146d9988014a12dc838ee7123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>ALUMINIUM ARSENIDES</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>CURRENTS</topic><topic>DATA</topic><topic>ELECTRIC CURRENTS</topic><topic>ENGINEERING</topic><topic>Exact sciences and technology</topic><topic>EXPERIMENTAL DATA</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>HETEROJUNCTIONS</topic><topic>INFORMATION</topic><topic>JUNCTIONS</topic><topic>LASERS</topic><topic>LAYERS</topic><topic>NUMERICAL DATA</topic><topic>OPERATION</topic><topic>Optics</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR JUNCTIONS 420300 -- Engineering-- Lasers-- (-1989)</topic><topic>SEMICONDUCTOR LASERS</topic><topic>Semiconductor lasers; laser diodes</topic><topic>THRESHOLD CURRENT</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>OGURA, M</creatorcontrib><creatorcontrib>WEI HSIN</creatorcontrib><creatorcontrib>MING-CHIANG WU</creatorcontrib><creatorcontrib>SHYH WANG</creatorcontrib><creatorcontrib>WHINNERY, J. R</creatorcontrib><creatorcontrib>WANG, S. C</creatorcontrib><creatorcontrib>YANG, J. J</creatorcontrib><creatorcontrib>Department of Electrical Engineering and Computer Science, and Electronics Research Laboratory, University of California, Berkeley, California 94720</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>OGURA, M</au><au>WEI HSIN</au><au>MING-CHIANG WU</au><au>SHYH WANG</au><au>WHINNERY, J. R</au><au>WANG, S. C</au><au>YANG, J. J</au><aucorp>Department of Electrical Engineering and Computer Science, and Electronics Research Laboratory, University of California, Berkeley, California 94720</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface-emitting laser diode with vertical GaAs/GaAlAs quarter-wavelength multilayers and lateral buried heterostructure</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1987-11-23</date><risdate>1987</risdate><volume>51</volume><issue>21</issue><spage>1655</spage><epage>1657</epage><pages>1655-1657</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Threshold current of 2 mA at room temperature cw operation is realized in a vertical distributed feedback surface-emitting laser diode with lateral buried heterostructure (LBH). In this LBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded with n- and p-type AlGaAs cladding layers for minority-carrier confinement. The far-field angle is 7°. The beam shape is nearly circular. However, the lasing spectrum is broad (2–3 nm) compared with the conventional edge-emitting laser. Major differences between the surface-emitting laser diode presented here and the conventional edge-emitting laser diode are discussed.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.98586</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Appl. Phys. Lett.; (United States), 1987-11, Vol.51 (21), p.1655-1657 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Digital Archive |
| subjects | ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CURRENTS DATA ELECTRIC CURRENTS ENGINEERING Exact sciences and technology EXPERIMENTAL DATA Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS HETEROJUNCTIONS INFORMATION JUNCTIONS LASERS LAYERS NUMERICAL DATA OPERATION Optics Physics PNICTIDES SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS 420300 -- Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS Semiconductor lasers laser diodes THRESHOLD CURRENT |
| title | Surface-emitting laser diode with vertical GaAs/GaAlAs quarter-wavelength multilayers and lateral buried heterostructure |
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