A novel GaInAsP/InP distributed feedback laser

A novel GaInAsP/InP distributed feedback laser

GaInAsP/InP distributed feedback lasers have been fabricated with a simple new design in which the grating is etched into the top of a mass-transported buried heterostructure. Single-frequency operation with sidemodes lower than −32 dB and threshold currents as low as 16 mA have been achieved.

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Veröffentlicht in:Applied physics letters 1985-02, Vol.46 (3), p.221-223
Hauptverfasser: LIAU, Z. L, FLANDERS, D. C, WALPOLE, J. N, DEMEO, N. L
Format: Artikel
Sprache:eng
Schlagworte:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Beschreibung
Zusammenfassung:GaInAsP/InP distributed feedback lasers have been fabricated with a simple new design in which the grating is etched into the top of a mass-transported buried heterostructure. Single-frequency operation with sidemodes lower than −32 dB and threshold currents as low as 16 mA have been achieved.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.95689