Analysis of ion-implanted surface and interface structures by computer-simulated backscattering spectra

Computer codes for synthesizing random and channeling backscattering spectra have been elaborated to characterize the surface and interface structures formed or modified by ion implantation. Both effects of isotopes and energy fluctuation are taken into account in the spectrum simulation. This backs...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1985-10, Vol.58 (8), p.3044-3051
Hauptverfasser:	KIDO, Y, KAKENO, M, YAMADA, K, KAWAMOTO, J, OHSAWA, H, KAWAKAMI, T
Format:	Artikel
Sprache:	eng
Schlagworte:	640301 - Atomic, Molecular & Chemical Physics- Beams & their Reactions ALUMINIUM ALUMINIUM COMPOUNDS ALUMINIUM NITRIDES ALUMINIUM OXIDES ATOM TRANSPORT BACKSCATTERING CHALCOGENIDES CHANNELING CHARGED PARTICLES CHARGED-PARTICLE TRANSPORT CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS COHERENT SCATTERING COLLISIONS COMPUTERIZED SIMULATION Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology DAMAGE DIFFRACTION DIFFUSION ELEMENTS ENERGY SPECTRA Exact sciences and technology ION CHANNELING ION COLLISIONS ION IMPLANTATION Ion radiation effects IONS Materials science METALS Metals, semimetals and alloys MIXING NEUTRAL-PARTICLE TRANSPORT NICKEL NICKEL COMPOUNDS NICKEL SILICIDES NITRIDES NITROGEN COMPOUNDS NITROGEN IONS Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other interactions of matter with particles and radiation OXIDES OXYGEN COMPOUNDS Physical radiation effects, radiation damage Physics PNICTIDES RADIATION TRANSPORT SCATTERING SEMIMETALS SILICIDES SILICON SILICON COMPOUNDS SIMULATION Specific materials SPECTRA Structure of solids and liquids crystallography SYNTHESIS TRANSITION ELEMENT COMPOUNDS TRANSITION ELEMENTS X-RAY DIFFRACTION XENON IONS
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Beschreibung
Zusammenfassung:	Computer codes for synthesizing random and channeling backscattering spectra have been elaborated to characterize the surface and interface structures formed or modified by ion implantation. Both effects of isotopes and energy fluctuation are taken into account in the spectrum simulation. This backscattering measurement combined with the simulation method is applied to characterization of the N+-implanted Al films and to quantitative analysis of chemical reaction and interdiffusion induced by ion-beam mixing. An ion-beam-induced damage profile and its epitaxial recovery of crystallinity are analyzed by the simulation of channeling spectra from ion-implanted Al2O3 substrates.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.335854