Metal chalcogenide films prepared from chelate organometallic compounds
The preparation of II–VI semiconductor compound films by the thermal decomposition of chelate organometallic compounds has been studied. An unusual aspect of the method is the formation of the film from one starting material consisting of both constituents of the semiconductor. A second unusual feat...
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Veröffentlicht in: | Thin solid films 1985-01, Vol.128 (3), p.241-249 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | The preparation of II–VI semiconductor compound films by the thermal decomposition of chelate organometallic compounds has been studied. An unusual aspect of the method is the formation of the film from one starting material consisting of both constituents of the semiconductor. A second unusual feature is the opportunity to prepare and grow cadmium and zinc sulphide, sulphide-telluride and sulphide-selenide films of ordered structure at comparatively low temperatures. The possibility of using these films in the thin film structures was investigated. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/0040-6090(85)90076-8 |