Metalorganic chemical vapor deposition and photoluminescence of nm GaAs doping superlattices

Metalorganic chemical vapor deposition and photoluminescence of nm GaAs doping superlattices

Metalorganic chemical vapor deposition of ultrathin doped GaAs multilayer structures is reported. Low-temperature photoluminescence is used as a powerful characterization method. By observing the shift of the effective band gap with varying layer thickness of doping superlattices we demonstrate that...

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Veröffentlicht in:Journal of applied physics 1985-08, Vol.58 (4), p.1696-1697
Hauptverfasser: ROENTGEN, P, GOETZ, K.-H, BENEKING, H
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:Metalorganic chemical vapor deposition of ultrathin doped GaAs multilayer structures is reported. Low-temperature photoluminescence is used as a powerful characterization method. By observing the shift of the effective band gap with varying layer thickness of doping superlattices we demonstrate that highly doped layers which are separated by only 4 nm do not diffuse together during growth.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.336039