Modulation-doped (Al,Ga)As/AlAs superlattice: electron transfer into AlAs
A modulation-doped superlattice of n-(Al,Ga)As and undoped AlAs has been grown by molecular beam epitaxy. At cryogenic temperatures, electrons transfer into the undoped AlAs layers and enhanced mobilities as high as 1000 cm2/Vs are observed for the first time. It is shown that by properly accounting...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1985-08, Vol.47 (3), p.284-286 |
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| container_title | Appl. Phys. Lett.; (United States) |
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| creator | DRUMMOND, T. J FRITZ, I. J |
| description | A modulation-doped superlattice of n-(Al,Ga)As and undoped AlAs has been grown by molecular beam epitaxy. At cryogenic temperatures, electrons transfer into the undoped AlAs layers and enhanced mobilities as high as 1000 cm2/Vs are observed for the first time. It is shown that by properly accounting for the depth of the donor level in modulation-doped heterostructures reasonably good limits can be set on the gamma point conduction-band discontinuity at the heterojunction. It is found that this discontinuity is approximately 60–65% of the band-gap difference between the two alloys, in good agreement with other recent determinations. |
| doi_str_mv | 10.1063/1.96193 |
| format | Article |
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It is found that this discontinuity is approximately 60–65% of the band-gap difference between the two alloys, in good agreement with other recent determinations.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.96193</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>360601 - Other Materials- Preparation & Manufacture ; 360603 - Materials- Properties ; ALUMINIUM ARSENIDES ; ALUMINIUM COMPOUNDS ; Applied sciences ; ARSENIC COMPOUNDS ; ARSENIDES ; CHARGED-PARTICLE TRANSPORT ; DATA ; ELECTRON MOBILITY ; ELECTRON TRANSFER ; Electronics ; ENERGY GAP ; EPITAXY ; Exact sciences and technology ; EXPERIMENTAL DATA ; FABRICATION ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; HALL EFFECT ; HETEROJUNCTIONS ; IMPURITIES ; INFORMATION ; Interfaces ; JUNCTIONS ; LOW TEMPERATURE ; MATERIALS SCIENCE ; MEDIUM TEMPERATURE ; MOBILITY ; MOLECULAR BEAM EPITAXY ; NUMERICAL DATA ; PARTICLE MOBILITY ; PNICTIDES ; RADIATION TRANSPORT ; Semiconductor electronics. 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It is found that this discontinuity is approximately 60–65% of the band-gap difference between the two alloys, in good agreement with other recent determinations.</description><subject>360601 - Other Materials- Preparation & Manufacture</subject><subject>360603 - Materials- Properties</subject><subject>ALUMINIUM ARSENIDES</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>Applied sciences</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>CHARGED-PARTICLE TRANSPORT</subject><subject>DATA</subject><subject>ELECTRON MOBILITY</subject><subject>ELECTRON TRANSFER</subject><subject>Electronics</subject><subject>ENERGY GAP</subject><subject>EPITAXY</subject><subject>Exact sciences and technology</subject><subject>EXPERIMENTAL DATA</subject><subject>FABRICATION</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>HALL EFFECT</subject><subject>HETEROJUNCTIONS</subject><subject>IMPURITIES</subject><subject>INFORMATION</subject><subject>Interfaces</subject><subject>JUNCTIONS</subject><subject>LOW TEMPERATURE</subject><subject>MATERIALS SCIENCE</subject><subject>MEDIUM TEMPERATURE</subject><subject>MOBILITY</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>NUMERICAL DATA</subject><subject>PARTICLE MOBILITY</subject><subject>PNICTIDES</subject><subject>RADIATION TRANSPORT</subject><subject>Semiconductor electronics. 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J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c341t-5d442998df2383cfbef8149e7ef70243a1f0aa208d3e9a7b2b8593ce6c07f7213</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>360601 - Other Materials- Preparation & Manufacture</topic><topic>360603 - Materials- Properties</topic><topic>ALUMINIUM ARSENIDES</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>Applied sciences</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>CHARGED-PARTICLE TRANSPORT</topic><topic>DATA</topic><topic>ELECTRON MOBILITY</topic><topic>ELECTRON TRANSFER</topic><topic>Electronics</topic><topic>ENERGY GAP</topic><topic>EPITAXY</topic><topic>Exact sciences and technology</topic><topic>EXPERIMENTAL DATA</topic><topic>FABRICATION</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>HALL EFFECT</topic><topic>HETEROJUNCTIONS</topic><topic>IMPURITIES</topic><topic>INFORMATION</topic><topic>Interfaces</topic><topic>JUNCTIONS</topic><topic>LOW TEMPERATURE</topic><topic>MATERIALS SCIENCE</topic><topic>MEDIUM TEMPERATURE</topic><topic>MOBILITY</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>NUMERICAL DATA</topic><topic>PARTICLE MOBILITY</topic><topic>PNICTIDES</topic><topic>RADIATION TRANSPORT</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SEMICONDUCTOR JUNCTIONS</topic><topic>SUPERLATTICES</topic><topic>ULTRALOW TEMPERATURE</topic><topic>VERY LOW TEMPERATURE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DRUMMOND, T. J</creatorcontrib><creatorcontrib>FRITZ, I. J</creatorcontrib><creatorcontrib>Sandia National Laboratories, Albuquerque, New Mexico 87185</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DRUMMOND, T. J</au><au>FRITZ, I. J</au><aucorp>Sandia National Laboratories, Albuquerque, New Mexico 87185</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modulation-doped (Al,Ga)As/AlAs superlattice: electron transfer into AlAs</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1985-08-01</date><risdate>1985</risdate><volume>47</volume><issue>3</issue><spage>284</spage><epage>286</epage><pages>284-286</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A modulation-doped superlattice of n-(Al,Ga)As and undoped AlAs has been grown by molecular beam epitaxy. At cryogenic temperatures, electrons transfer into the undoped AlAs layers and enhanced mobilities as high as 1000 cm2/Vs are observed for the first time. It is shown that by properly accounting for the depth of the donor level in modulation-doped heterostructures reasonably good limits can be set on the gamma point conduction-band discontinuity at the heterojunction. It is found that this discontinuity is approximately 60–65% of the band-gap difference between the two alloys, in good agreement with other recent determinations.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.96193</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Appl. Phys. Lett.; (United States), 1985-08, Vol.47 (3), p.284-286 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Digital Archive |
| subjects | 360601 - Other Materials- Preparation & Manufacture 360603 - Materials- Properties ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS Applied sciences ARSENIC COMPOUNDS ARSENIDES CHARGED-PARTICLE TRANSPORT DATA ELECTRON MOBILITY ELECTRON TRANSFER Electronics ENERGY GAP EPITAXY Exact sciences and technology EXPERIMENTAL DATA FABRICATION GALLIUM ARSENIDES GALLIUM COMPOUNDS HALL EFFECT HETEROJUNCTIONS IMPURITIES INFORMATION Interfaces JUNCTIONS LOW TEMPERATURE MATERIALS SCIENCE MEDIUM TEMPERATURE MOBILITY MOLECULAR BEAM EPITAXY NUMERICAL DATA PARTICLE MOBILITY PNICTIDES RADIATION TRANSPORT Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SEMICONDUCTOR JUNCTIONS SUPERLATTICES ULTRALOW TEMPERATURE VERY LOW TEMPERATURE |
| title | Modulation-doped (Al,Ga)As/AlAs superlattice: electron transfer into AlAs |
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