Modulation-doped (Al,Ga)As/AlAs superlattice: electron transfer into AlAs

A modulation-doped superlattice of n-(Al,Ga)As and undoped AlAs has been grown by molecular beam epitaxy. At cryogenic temperatures, electrons transfer into the undoped AlAs layers and enhanced mobilities as high as 1000 cm2/Vs are observed for the first time. It is shown that by properly accounting...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1985-08, Vol.47 (3), p.284-286
Hauptverfasser:	DRUMMOND, T. J, FRITZ, I. J
Format:	Artikel
Sprache:	eng
Schlagworte:	360601 - Other Materials- Preparation & Manufacture 360603 - Materials- Properties ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS Applied sciences ARSENIC COMPOUNDS ARSENIDES CHARGED-PARTICLE TRANSPORT DATA ELECTRON MOBILITY ELECTRON TRANSFER Electronics ENERGY GAP EPITAXY Exact sciences and technology EXPERIMENTAL DATA FABRICATION GALLIUM ARSENIDES GALLIUM COMPOUNDS HALL EFFECT HETEROJUNCTIONS IMPURITIES INFORMATION Interfaces JUNCTIONS LOW TEMPERATURE MATERIALS SCIENCE MEDIUM TEMPERATURE MOBILITY MOLECULAR BEAM EPITAXY NUMERICAL DATA PARTICLE MOBILITY PNICTIDES RADIATION TRANSPORT Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SEMICONDUCTOR JUNCTIONS SUPERLATTICES ULTRALOW TEMPERATURE VERY LOW TEMPERATURE
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Zusammenfassung:	A modulation-doped superlattice of n-(Al,Ga)As and undoped AlAs has been grown by molecular beam epitaxy. At cryogenic temperatures, electrons transfer into the undoped AlAs layers and enhanced mobilities as high as 1000 cm2/Vs are observed for the first time. It is shown that by properly accounting for the depth of the donor level in modulation-doped heterostructures reasonably good limits can be set on the gamma point conduction-band discontinuity at the heterojunction. It is found that this discontinuity is approximately 60–65% of the band-gap difference between the two alloys, in good agreement with other recent determinations.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.96193