Microwave amplification to 2.5 GHz in a quantum state transfer device

Microwave amplification to 2.5 GHz in a quantum state transfer device

Reflection amplification has been demonstrated from 40 MHz to 2.5 GHz using a bilevel superlattice structure known as a quantum state transfer device. Measurements of the magnitude and phase of the voltage reflection coefficient were made at 300 K using a specialized microwave probe. The maximum nor...

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Veröffentlicht in:Applied physics letters 1985-12, Vol.47 (11), p.1175-1177
Hauptverfasser: POND, J. M, KIRCHOEFER, S. W, CUKAUSKAS, E. J
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Microwave and submillimeter wave devices, electron transfer devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:Reflection amplification has been demonstrated from 40 MHz to 2.5 GHz using a bilevel superlattice structure known as a quantum state transfer device. Measurements of the magnitude and phase of the voltage reflection coefficient were made at 300 K using a specialized microwave probe. The maximum normalized gain, at 40 MHz, approaches the gain expected from dc measurements of the negative differential resistance.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96317