Lateral photodetectors on semi-insulating InGaAs and InP

Lateral photodetectors on semi-insulating InGaAs and InP

A new type of high-performance lateral PIN photodector has been formed by alloying p-type and n-type metallic contacts onto semi-insulating InGaAs or InP without a separate junction fabrication step. Low dark current (

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Veröffentlicht in:Applied physics letters 1985-01, Vol.46 (2), p.157-158
Hauptverfasser: DIADIUK, V, GROVES, S. H
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Applied sciences
Exact sciences and technology
Systems, networks and services of telecommunications
Telecommunications
Telecommunications and information theory
Transmission and modulation (techniques and equipments)
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container_title Applied physics letters
container_volume 46
creator DIADIUK, V
GROVES, S. H
description A new type of high-performance lateral PIN photodector has been formed by alloying p-type and n-type metallic contacts onto semi-insulating InGaAs or InP without a separate junction fabrication step. Low dark current (
doi_str_mv 10.1063/1.95720
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_24643471</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24643471</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-7fe472df74397a2240018d854d740f05167152385e7cbc7c9b90701367f5f77b3</originalsourceid><addsrcrecordid>eNo9kEFLAzEUhIMoWKv4F_YgetqabJJ9ybEUrYWCHvQc0myiK9uk5qUH_72rLZ5mBj6GYQi5ZnTGaMvv2UxLaOgJmTAKUHPG1CmZUEp53WrJzskF4ucYZcP5hKi1LT7bodp9pJI6X7wrKWOVYoV-29d9xP1gSx_fq1Vc2jlWNnajfbkkZ8EO6K-OOiVvjw-vi6d6_bxcLebr2nGhSw3BC2i6AIJrsE0jKGWqU1J0IGigkrXAxiVKenAbB05vNAXKeAtBBoANn5LbQ-8up6-9x2K2PTo_DDb6tEfTiFZwAWwE7w6gywkx-2B2ud_a_G0YNb_PGGb-nhnJm2OlRWeHkG10Pf7jSoACrfgPrINfZw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24643471</pqid></control><display><type>article</type><title>Lateral photodetectors on semi-insulating InGaAs and InP</title><source>AIP Digital Archive</source><creator>DIADIUK, V ; GROVES, S. H</creator><creatorcontrib>DIADIUK, V ; GROVES, S. H</creatorcontrib><description>A new type of high-performance lateral PIN photodector has been formed by alloying p-type and n-type metallic contacts onto semi-insulating InGaAs or InP without a separate junction fabrication step. Low dark current (&lt;1 nA), high external quantum efficiency (40% at λ=1.24 μm, without antireflection coating), and high speed (full width at half-maximum &lt;50 ps) have been obtained with reverse bias of 10 V. These characteristics, plus the simplicity of fabrication and the planar lateral configuration, make these devices attractive for monolithic integration with field-effect transistors and for photodetector arrays.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.95720</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Applied sciences ; Exact sciences and technology ; Systems, networks and services of telecommunications ; Telecommunications ; Telecommunications and information theory ; Transmission and modulation (techniques and equipments)</subject><ispartof>Applied physics letters, 1985-01, Vol.46 (2), p.157-158</ispartof><rights>1986 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-7fe472df74397a2240018d854d740f05167152385e7cbc7c9b90701367f5f77b3</citedby><cites>FETCH-LOGICAL-c349t-7fe472df74397a2240018d854d740f05167152385e7cbc7c9b90701367f5f77b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=8478798$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>DIADIUK, V</creatorcontrib><creatorcontrib>GROVES, S. H</creatorcontrib><title>Lateral photodetectors on semi-insulating InGaAs and InP</title><title>Applied physics letters</title><description>A new type of high-performance lateral PIN photodector has been formed by alloying p-type and n-type metallic contacts onto semi-insulating InGaAs or InP without a separate junction fabrication step. Low dark current (&lt;1 nA), high external quantum efficiency (40% at λ=1.24 μm, without antireflection coating), and high speed (full width at half-maximum &lt;50 ps) have been obtained with reverse bias of 10 V. These characteristics, plus the simplicity of fabrication and the planar lateral configuration, make these devices attractive for monolithic integration with field-effect transistors and for photodetector arrays.</description><subject>Applied sciences</subject><subject>Exact sciences and technology</subject><subject>Systems, networks and services of telecommunications</subject><subject>Telecommunications</subject><subject>Telecommunications and information theory</subject><subject>Transmission and modulation (techniques and equipments)</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNo9kEFLAzEUhIMoWKv4F_YgetqabJJ9ybEUrYWCHvQc0myiK9uk5qUH_72rLZ5mBj6GYQi5ZnTGaMvv2UxLaOgJmTAKUHPG1CmZUEp53WrJzskF4ucYZcP5hKi1LT7bodp9pJI6X7wrKWOVYoV-29d9xP1gSx_fq1Vc2jlWNnajfbkkZ8EO6K-OOiVvjw-vi6d6_bxcLebr2nGhSw3BC2i6AIJrsE0jKGWqU1J0IGigkrXAxiVKenAbB05vNAXKeAtBBoANn5LbQ-8up6-9x2K2PTo_DDb6tEfTiFZwAWwE7w6gywkx-2B2ud_a_G0YNb_PGGb-nhnJm2OlRWeHkG10Pf7jSoACrfgPrINfZw</recordid><startdate>19850115</startdate><enddate>19850115</enddate><creator>DIADIUK, V</creator><creator>GROVES, S. H</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19850115</creationdate><title>Lateral photodetectors on semi-insulating InGaAs and InP</title><author>DIADIUK, V ; GROVES, S. H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-7fe472df74397a2240018d854d740f05167152385e7cbc7c9b90701367f5f77b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Applied sciences</topic><topic>Exact sciences and technology</topic><topic>Systems, networks and services of telecommunications</topic><topic>Telecommunications</topic><topic>Telecommunications and information theory</topic><topic>Transmission and modulation (techniques and equipments)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DIADIUK, V</creatorcontrib><creatorcontrib>GROVES, S. H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DIADIUK, V</au><au>GROVES, S. H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lateral photodetectors on semi-insulating InGaAs and InP</atitle><jtitle>Applied physics letters</jtitle><date>1985-01-15</date><risdate>1985</risdate><volume>46</volume><issue>2</issue><spage>157</spage><epage>158</epage><pages>157-158</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A new type of high-performance lateral PIN photodector has been formed by alloying p-type and n-type metallic contacts onto semi-insulating InGaAs or InP without a separate junction fabrication step. Low dark current (&lt;1 nA), high external quantum efficiency (40% at λ=1.24 μm, without antireflection coating), and high speed (full width at half-maximum &lt;50 ps) have been obtained with reverse bias of 10 V. These characteristics, plus the simplicity of fabrication and the planar lateral configuration, make these devices attractive for monolithic integration with field-effect transistors and for photodetector arrays.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.95720</doi><tpages>2</tpages></addata></record>
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subjects Applied sciences
Exact sciences and technology
Systems, networks and services of telecommunications
Telecommunications
Telecommunications and information theory
Transmission and modulation (techniques and equipments)
title Lateral photodetectors on semi-insulating InGaAs and InP
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T02%3A47%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Lateral%20photodetectors%20on%20semi-insulating%20InGaAs%20and%20InP&rft.jtitle=Applied%20physics%20letters&rft.au=DIADIUK,%20V&rft.date=1985-01-15&rft.volume=46&rft.issue=2&rft.spage=157&rft.epage=158&rft.pages=157-158&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.95720&rft_dat=%3Cproquest_cross%3E24643471%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=24643471&rft_id=info:pmid/&rfr_iscdi=true