Lateral photodetectors on semi-insulating InGaAs and InP

A new type of high-performance lateral PIN photodector has been formed by alloying p-type and n-type metallic contacts onto semi-insulating InGaAs or InP without a separate junction fabrication step. Low dark current (

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Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1985-01, Vol.46 (2), p.157-158
Hauptverfasser:	DIADIUK, V, GROVES, S. H
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Exact sciences and technology Systems, networks and services of telecommunications Telecommunications Telecommunications and information theory Transmission and modulation (techniques and equipments)
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A new type of high-performance lateral PIN photodector has been formed by alloying p-type and n-type metallic contacts onto semi-insulating InGaAs or InP without a separate junction fabrication step. Low dark current (
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.95720