Optical investigation of highly strained InGaAs-GaAs multiple quantum wells

Low-temperature optical transmission spectra of several In(x)Ga(1-x)/GaAs strained MQWs with x = 0.13-0.19 and well widths of 85-213 A have been measured. The excitonic transitions up to 3C-3H were observed along with steplike structures corresponding to band-to-band transitions, identified as 1C-1L...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1987-10, Vol.62 (8), p.3366-3373
Hauptverfasser:	Ji, G., Huang, D., Reddy, U. K., Henderson, T. S., Houdre, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	360603 - Materials- Properties ABSORPTION SPECTRA ARSENIC COMPOUNDS ARSENIDES Condensed matter: electronic structure, electrical, magnetic, and optical properties ELECTRONIC STRUCTURE ENERGY-LEVEL TRANSITIONS Exact sciences and technology EXCITONS GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM ARSENIDES INDIUM COMPOUNDS LAYERS LIGHT TRANSMISSION MATERIALS SCIENCE Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics PNICTIDES QUASI PARTICLES Solid-State Physics SPECTRA
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Zusammenfassung:	Low-temperature optical transmission spectra of several In(x)Ga(1-x)/GaAs strained MQWs with x = 0.13-0.19 and well widths of 85-213 A have been measured. The excitonic transitions up to 3C-3H were observed along with steplike structures corresponding to band-to-band transitions, identified as 1C-1L transitions. By fitting experimental results to the calculations, it is concluded that the light holes are in the GaAs barrier region (type II MQW), and the valence-band offset is determined to be 0.30. Attention is given to a possible system in which the transition from type I to type II for light holes might be observed.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.339299