Electrical conductivity of polycrystalline Al sub 2 O sub 3 doped with silicon

Electrical conductivity of polycrystalline Al sub 2 O sub 3 doped with silicon

Measurement of dc conductivity shows it acts as a single donor, the level lying approximately equal to 165 kJ/mol below the conduction band. Si in excess of the solubility limit ( approximately equal to 220 ppm at 1500 degrees C, 300 ppm at 1600 degrees ) is present as a glassy aluminosilicate secon...

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Veröffentlicht in:Journal of the American Ceramic Society 1985-01, Vol.68 (2), p.92-99
Hauptverfasser: Lee, C H, Kroeger, F A
Format: Artikel
Sprache:eng
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Zusammenfassung:Measurement of dc conductivity shows it acts as a single donor, the level lying approximately equal to 165 kJ/mol below the conduction band. Si in excess of the solubility limit ( approximately equal to 220 ppm at 1500 degrees C, 300 ppm at 1600 degrees ) is present as a glassy aluminosilicate second phase. Si dissolved in Al sub 2 O sub 3 tends to segregate at grain boundaries.
ISSN:0002-7820