A generalized criterion for the transition from the layer to the continuous mechanism of crystal growth

Computer simulation studies of the structure and the kinetics of motion of interfaces in terms of a lattice model permit the derivation of a general criterion for the transition from the layer to the continuous crystal growth mechanism. This criterion takes into account the relation between the crit...

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Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 1985-08, Vol.90 (2), p.425-437
Hauptverfasser: Esin, V. O., Tarabaev, L. P.
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Tarabaev, L. P.
description Computer simulation studies of the structure and the kinetics of motion of interfaces in terms of a lattice model permit the derivation of a general criterion for the transition from the layer to the continuous crystal growth mechanism. This criterion takes into account the relation between the critical driving force and the roughening temperature for interfaces. The coupling constants depend on the structure of the crystals and on the crystallographic orientation of the faces. Materials with different melting entropy and of different types of crystal structures are classified accordingly to the crystal growth mechanisms. [Russian Text Ignored].
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source Wiley Online Library Journals Frontfile Complete
subjects Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
title A generalized criterion for the transition from the layer to the continuous mechanism of crystal growth
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