A generalized criterion for the transition from the layer to the continuous mechanism of crystal growth
Computer simulation studies of the structure and the kinetics of motion of interfaces in terms of a lattice model permit the derivation of a general criterion for the transition from the layer to the continuous crystal growth mechanism. This criterion takes into account the relation between the crit...
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Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1985-08, Vol.90 (2), p.425-437 |
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creator | Esin, V. O. Tarabaev, L. P. |
description | Computer simulation studies of the structure and the kinetics of motion of interfaces in terms of a lattice model permit the derivation of a general criterion for the transition from the layer to the continuous crystal growth mechanism. This criterion takes into account the relation between the critical driving force and the roughening temperature for interfaces. The coupling constants depend on the structure of the crystals and on the crystallographic orientation of the faces. Materials with different melting entropy and of different types of crystal structures are classified accordingly to the crystal growth mechanisms.
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doi_str_mv | 10.1002/pssa.2210900203 |
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[Russian Text Ignored].</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><issn>0031-8965</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNpFUE1v1DAQtRCVWErPXHNA3FLGnjjeiNOqogtSC1VbPsTFcpzxriGJF9ursvx60t2qPY3evA_NPMZeczjlAOLdJiVzKgSHZkKAz9iMS8FLbOofz9kMAHk5b2r5gr1M6RcAVKBgxlaLYkUjRdP7f9QVNvpM0YexcCEWeU1FjmZMPu9XMQz7XW92NLFhD2wYsx-3YZuKgezajD4NRXBT1C5l0xerGO7y-hU7cqZPdPIwj9nX8w-3Zx_Liy_LT2eLi9Ki5FhKFBUqQSg61wq00BhUjZVI1lYdCu5k46SDFrvKdcSloqZVZt5QR6ptCY_Z20PuJoY_W0pZDz5Z6nsz0nSiFlUtlKzkJHzzIDTJmt5Nb1qf9Cb6wcSdntcSpJxPsvcH2Z3vafdIc9D3pev70vVT6frq5mbxBCd3eXD7lOnvo9vE37pWqKT-_nmpL2_x5_USvulL_A837Ioz</recordid><startdate>19850816</startdate><enddate>19850816</enddate><creator>Esin, V. O.</creator><creator>Tarabaev, L. P.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope><scope>7QF</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19850816</creationdate><title>A generalized criterion for the transition from the layer to the continuous mechanism of crystal growth</title><author>Esin, V. O. ; Tarabaev, L. P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3513-5324372e32dfb23c09a379c53ecc4d321f59f5f0b3d4fde157e9b7a89ede7bbe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><toplevel>online_resources</toplevel><creatorcontrib>Esin, V. O.</creatorcontrib><creatorcontrib>Tarabaev, L. P.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Physica status solidi. A, Applied research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Esin, V. O.</au><au>Tarabaev, L. P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A generalized criterion for the transition from the layer to the continuous mechanism of crystal growth</atitle><jtitle>Physica status solidi. A, Applied research</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>1985-08-16</date><risdate>1985</risdate><volume>90</volume><issue>2</issue><spage>425</spage><epage>437</epage><pages>425-437</pages><issn>0031-8965</issn><eissn>1521-396X</eissn><coden>PSSABA</coden><abstract>Computer simulation studies of the structure and the kinetics of motion of interfaces in terms of a lattice model permit the derivation of a general criterion for the transition from the layer to the continuous crystal growth mechanism. This criterion takes into account the relation between the critical driving force and the roughening temperature for interfaces. The coupling constants depend on the structure of the crystals and on the crystallographic orientation of the faces. Materials with different melting entropy and of different types of crystal structures are classified accordingly to the crystal growth mechanisms.
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source | Wiley Online Library Journals Frontfile Complete |
subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
title | A generalized criterion for the transition from the layer to the continuous mechanism of crystal growth |
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