A generalized criterion for the transition from the layer to the continuous mechanism of crystal growth

Computer simulation studies of the structure and the kinetics of motion of interfaces in terms of a lattice model permit the derivation of a general criterion for the transition from the layer to the continuous crystal growth mechanism. This criterion takes into account the relation between the crit...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 1985-08, Vol.90 (2), p.425-437
Hauptverfasser: Esin, V. O., Tarabaev, L. P.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Computer simulation studies of the structure and the kinetics of motion of interfaces in terms of a lattice model permit the derivation of a general criterion for the transition from the layer to the continuous crystal growth mechanism. This criterion takes into account the relation between the critical driving force and the roughening temperature for interfaces. The coupling constants depend on the structure of the crystals and on the crystallographic orientation of the faces. Materials with different melting entropy and of different types of crystal structures are classified accordingly to the crystal growth mechanisms. [Russian Text Ignored].
ISSN:0031-8965
1521-396X
DOI:10.1002/pssa.2210900203