Hole-mediated chemisorption of atomic hydrogen in silicon

Hole-mediated chemisorption of atomic hydrogen in silicon

It has been shown that at 120 °C atomic hydrogen diffuses into p-type silicon where it ties to a Si dangling bond near an acceptor. However, a thin n-type surface layer blocks the entry of atomic hydrogen. This demonstrates that free holes in the surface layer are needed to permit the entry of atomi...

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Veröffentlicht in:Applied physics letters 1985-01, Vol.47 (7), p.748-750
Hauptverfasser: PANKOVE, J. I, MAGEE, C. W, WANCE, R. O
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Diffusion in solids
Diffusion of impurities
Exact sciences and technology
Other techniques and industries
Physics
Transport properties of condensed matter (nonelectronic)
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container_end_page 750
container_issue 7
container_start_page 748
container_title Applied physics letters
container_volume 47
creator PANKOVE, J. I
MAGEE, C. W
WANCE, R. O
description It has been shown that at 120 °C atomic hydrogen diffuses into p-type silicon where it ties to a Si dangling bond near an acceptor. However, a thin n-type surface layer blocks the entry of atomic hydrogen. This demonstrates that free holes in the surface layer are needed to permit the entry of atomic hydrogen.
doi_str_mv 10.1063/1.96026
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ispartof Applied physics letters, 1985-01, Vol.47 (7), p.748-750
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1077-3118
language eng
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source AIP Digital Archive
subjects Applied sciences
Condensed matter: structure, mechanical and thermal properties
Diffusion in solids
Diffusion of impurities
Exact sciences and technology
Other techniques and industries
Physics
Transport properties of condensed matter (nonelectronic)
title Hole-mediated chemisorption of atomic hydrogen in silicon
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