Hole-mediated chemisorption of atomic hydrogen in silicon

It has been shown that at 120 °C atomic hydrogen diffuses into p-type silicon where it ties to a Si dangling bond near an acceptor. However, a thin n-type surface layer blocks the entry of atomic hydrogen. This demonstrates that free holes in the surface layer are needed to permit the entry of atomi...

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Veröffentlicht in:	Applied physics letters 1985-01, Vol.47 (7), p.748-750
Hauptverfasser:	PANKOVE, J. I, MAGEE, C. W, WANCE, R. O
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: structure, mechanical and thermal properties Diffusion in solids Diffusion of impurities Exact sciences and technology Other techniques and industries Physics Transport properties of condensed matter (nonelectronic)
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Beschreibung
Zusammenfassung:	It has been shown that at 120 °C atomic hydrogen diffuses into p-type silicon where it ties to a Si dangling bond near an acceptor. However, a thin n-type surface layer blocks the entry of atomic hydrogen. This demonstrates that free holes in the surface layer are needed to permit the entry of atomic hydrogen.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.96026