High-power single longitudinal mode operation of inverted channel substrate planar lasers

A high-power GaAs/GaAlAs double heterostructure laser is developed by using the metalorganic chemical vapor deposition technique. The laser has an index-guided, inverted channel substrate planar structure. Linear output power characteristics were observed to ∼80 mW cw on submount without facet coati...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1985-12, Vol.58 (11), p.4480-4482
Hauptverfasser:	YANG, J. J, HONG, C. S, NIESEN, J, FIGUEROA, L
Format:	Artikel
Sprache:	eng
Schlagworte:	420300 - Engineering- Lasers- (-1989) ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CHEMICAL COATING CHEMICAL VAPOR DEPOSITION COATINGS DATA DEPOSITION EFFICIENCY ENGINEERING Exact sciences and technology EXPERIMENTAL DATA FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS HETEROJUNCTIONS INFORMATION JUNCTIONS LASERS NUMERICAL DATA OPERATION Optics ORGANIC COMPOUNDS ORGANOMETALLIC COMPOUNDS Physics PNICTIDES POWER POWER RANGE MILLI W QUANTUM EFFICIENCY SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS SEMICONDUCTOR LASERS Semiconductor lasers laser diodes STABILITY SURFACE COATING
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Beschreibung
Zusammenfassung:	A high-power GaAs/GaAlAs double heterostructure laser is developed by using the metalorganic chemical vapor deposition technique. The laser has an index-guided, inverted channel substrate planar structure. Linear output power characteristics were observed to ∼80 mW cw on submount without facet coatings. The device operated in a stable single mode to a power >40 mW.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.336261