A new technology for fast switching circuits on glass

A low-temperature self-aligned photolithographic process is described to fabricate fast switching digital poly-CdSe thin-film transistors (TFT's) on glass, The use of sintered CdSe-In 2 Se 3 mixtures as an evaporation source for the semiconductor resulted in TFT's with attractive static an...

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Veröffentlicht in:	IEEE electron device letters 1987-10, Vol.8 (10), p.477-479
Hauptverfasser:	Van Calster, A., De Rycke, I., Vervaet, A., De Baets, J., Vanfleteren, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Delay Electronics Exact sciences and technology Glass Insulation Integrated circuits Inverters Semiconductor device doping Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films Substrates Switching circuits Thin film transistors
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Beschreibung
Zusammenfassung:	A low-temperature self-aligned photolithographic process is described to fabricate fast switching digital poly-CdSe thin-film transistors (TFT's) on glass, The use of sintered CdSe-In 2 Se 3 mixtures as an evaporation source for the semiconductor resulted in TFT's with attractive static and dynamic characteristics. The measured inverter delay for a 20-µm technology was 75 ns.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/EDL.1987.26700