A new silicon nitride mask technology for synchrotron radiation x-ray lithography: First results

A new silicon nitride mask technology for synchrotron radiation x-ray lithography: First results

The processing steps for making an X-ray mask for X-Ray Lithography at the Wisconsin Center for X-Ray Lithography (W-CXRL) are reviewed. Silicon nitride can be used to make a stable and reliable mask blank with high optical transparency. A method to measure and monitor the strain field in the silico...

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Veröffentlicht in:Microelectronic engineering 1987, Vol.6 (1), p.299-304
Hauptverfasser: Visser, C.C.G., Uglow, J.E., Burns, D.W., Wells, G., Redaelli, R., Cerrina, F., Guckel, H.
Format: Artikel
Sprache:eng
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Zusammenfassung:The processing steps for making an X-ray mask for X-Ray Lithography at the Wisconsin Center for X-Ray Lithography (W-CXRL) are reviewed. Silicon nitride can be used to make a stable and reliable mask blank with high optical transparency. A method to measure and monitor the strain field in the silicon nitride film is discussed. A tri-level resist is a promising method to make a pattern for electroplating gold as an X-ray absorber.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(87)90053-0