On the temperature dependence of the Mott–Schottky characteristics of high-barrier Ti– p -Si metal-insulator-semiconductor diodes

Mott–Schottky characteristics of Ti–p-Si metal-oxide-semiconductor diodes have been studied as a function of temperature and doping concentration. It was concluded that the contact gives rise to a strongly inverted semiconductor surface. Under these conditions, it is known that the value of the volt...

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Veröffentlicht in:	Journal of applied physics 1987-03, Vol.61 (6), p.2277-2281
Hauptverfasser:	Lootens, D. U., Hanselaer, P. L., Laflère, W. H., Van Meirhaeghe, R. L., Cardon, F.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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