On the temperature dependence of the Mott–Schottky characteristics of high-barrier Ti– p -Si metal-insulator-semiconductor diodes

Mott–Schottky characteristics of Ti–p-Si metal-oxide-semiconductor diodes have been studied as a function of temperature and doping concentration. It was concluded that the contact gives rise to a strongly inverted semiconductor surface. Under these conditions, it is known that the value of the voltage intercept associated with the Mott–Schottky characteristics is only an underestimation of the built-in voltage. This offers an explanation for the anomalous temperature dependence of the barrier height determined from Mott–Schottky plots, as reported by several authors.