Heavy Ion Induced Permanent Damage in MNOS Gate Insulators

Heavy Ion Induced Permanent Damage in MNOS Gate Insulators

Heavy-ion-induced permanent damage in MNOS gate insulators has been investigated using a Cf252 fission source. The electric field and ion LET thresholds for onset of the damage has been characterized. The results are consistent with a thermal runaway mechanism in the silicon nitride layer initiated...

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Veröffentlicht in:IEEE transactions on nuclear science 1985-12, Vol.32 (6), p.4176-4179
Hauptverfasser: Pickel, James C., Blandford, James T., Waskiewicz, A. E., Strahan, V. H.
Format: Artikel
Sprache:eng
Schlagworte:
Capacitors
Cyclotrons
Degradation
Dielectric substrates
Dielectrics and electrical insulation
EPROM
FETs
Insulator testing
Silicon
Thermal conductivity
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Zusammenfassung:Heavy-ion-induced permanent damage in MNOS gate insulators has been investigated using a Cf252 fission source. The electric field and ion LET thresholds for onset of the damage has been characterized. The results are consistent with a thermal runaway mechanism in the silicon nitride layer initiated by a single heavy ion and leading to a permanent high conductivity path through the dielectric layers.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1985.4334089