Effect of annealing on chemical state of phosphorus in SiO sub 2 films

ESCA data show that annealing increases P- O bonding compared to P- Si bonds as a function of temp. and time. The bonding affects physical and electrical behavior of VLSI devices.

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Veröffentlicht in:	Journal of the Electrochemical Society 1985-01, Vol.132 (4), p.932-936
Hauptverfasser:	Wu, Owen K T, Saxena, A N
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Sprache:	eng
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description	ESCA data show that annealing increases P- O bonding compared to P- Si bonds as a function of temp. and time. The bonding affects physical and electrical behavior of VLSI devices.
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source	IOP Publishing Journals
title	Effect of annealing on chemical state of phosphorus in SiO sub 2 films
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