Effect of annealing on chemical state of phosphorus in SiO sub 2 films

Effect of annealing on chemical state of phosphorus in SiO sub 2 films

ESCA data show that annealing increases P- O bonding compared to P- Si bonds as a function of temp. and time. The bonding affects physical and electrical behavior of VLSI devices.

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Veröffentlicht in:Journal of the Electrochemical Society 1985-01, Vol.132 (4), p.932-936
Hauptverfasser: Wu, Owen K T, Saxena, A N
Format: Artikel
Sprache:eng
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Zusammenfassung:ESCA data show that annealing increases P- O bonding compared to P- Si bonds as a function of temp. and time. The bonding affects physical and electrical behavior of VLSI devices.
ISSN:0013-4651