Many body effects in a modulation-doped semiconductor quantum well

The electron areal concentration n(s) of a one-sided, 130 A-thick GaAs- Ga(Al)As modulation-doped quantum well is continuously varied from 0 to 6.6 x 10 to the 11th/sq cm by use of a Schottky gate. This allows one to study the precise evolution of the luminescence and excitation spectra with increas...

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Veröffentlicht in:	Physical review letters 1987-12, Vol.59 (23), p.2690-2692
Hauptverfasser:	DELALANDE, C, BASTARD, G, ORGONASI, J, BRUM, J. A, LIU, H. W, VOOS, M, WEIMANN, G, SCHLAPP, W
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The electron areal concentration n(s) of a one-sided, 130 A-thick GaAs- Ga(Al)As modulation-doped quantum well is continuously varied from 0 to 6.6 x 10 to the 11th/sq cm by use of a Schottky gate. This allows one to study the precise evolution of the luminescence and excitation spectra with increasing n(s). From a comparison between the measured peak positions and Hartree calculations of the energy levels, a measurement of the band-gap renormalization is obtained. (Author)
ISSN:	0031-9007 1079-7114
DOI:	10.1103/physrevlett.59.2690