Measurement and Interpretation of stress in aluminum-based metallization as a function of thermal history

Measurement and Interpretation of stress in aluminum-based metallization as a function of thermal history

Mechanical stress in interconnections is a problem of growing importance in VLSI devices. The origins of this stress are discussed, and a measurement technique based on the determination of wafer curvature with a laser scanning device is described. The changes in stress observed during thermal cycle...

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Veröffentlicht in:IEEE transactions on electron devices 1987-03, Vol.34 (3), p.689-699
Hauptverfasser: Flinn, P.A., Gardner, D.S., Nix, W.D.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Laser beams
Measurement by laser beam
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Strain
Stress
Stress measurement
Substrates
Temperature measurement
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Beschreibung
Zusammenfassung:Mechanical stress in interconnections is a problem of growing importance in VLSI devices. The origins of this stress are discussed, and a measurement technique based on the determination of wafer curvature with a laser scanning device is described. The changes in stress observed during thermal cycles are interpreted quantitatively in terms of a simple model of elastic and plastic strain in the metal. The effects of changes in deposition conditions, film composition, and film structure are discussed.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1987.22981