Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/GaAlAs multiple quantum well lasers
We have demonstrated a relaxation oscillation frequency (fr) of up to 30 GHz in highly p-doped (Be=1×1019 cm−3) GaAs/GaAlAs multiple quantum well (MQW) lasers grown by molecular beam epitaxy. This is the highest fr achieved at room temperature for III-V semiconductor lasers. The high fr is attained...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1987-07, Vol.51 (2), p.78-80 |
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| container_title | Appl. Phys. Lett.; (United States) |
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| creator | UOMI, K MISHIMA, T CHINONE, N |
| description | We have demonstrated a relaxation oscillation frequency (fr) of up to 30 GHz in highly p-doped (Be=1×1019 cm−3) GaAs/GaAlAs multiple quantum well (MQW) lasers grown by molecular beam epitaxy. This is the highest fr achieved at room temperature for III-V semiconductor lasers. The high fr is attained by the large differential gain in the p-doped MQW structure having a low threshold electron density resulted from the excess hole density in addition to the quantum size effect. |
| doi_str_mv | 10.1063/1.98603 |
| format | Article |
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This is the highest fr achieved at room temperature for III-V semiconductor lasers. 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Phys. Lett.; (United States)</title><description>We have demonstrated a relaxation oscillation frequency (fr) of up to 30 GHz in highly p-doped (Be=1×1019 cm−3) GaAs/GaAlAs multiple quantum well (MQW) lasers grown by molecular beam epitaxy. This is the highest fr achieved at room temperature for III-V semiconductor lasers. The high fr is attained by the large differential gain in the p-doped MQW structure having a low threshold electron density resulted from the excess hole density in addition to the quantum size effect.</description><subject>ALKALINE EARTH METALS</subject><subject>ALUMINIUM ARSENIDES</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>AMPLIFICATION</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>BERYLLIUM</subject><subject>ELECTRON DENSITY</subject><subject>ELEMENTS</subject><subject>ENERGY</subject><subject>ENGINEERING</subject><subject>EPITAXY</subject><subject>Exact sciences and technology</subject><subject>FABRICATION</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>GAIN</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>HOLES</subject><subject>LASERS</subject><subject>METALS</subject><subject>MODULATION</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>Optics</subject><subject>OSCILLATIONS</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>RELAXATION</subject><subject>SEMICONDUCTOR DEVICES 420300 -- Engineering-- Lasers-- (-1989)</subject><subject>SEMICONDUCTOR LASERS</subject><subject>Semiconductor lasers; laser diodes</subject><subject>THRESHOLD ENERGY</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNo9kE9r3DAQxUVJoZu09CuIEtL04ETy2NLquIRmUwj00pzFSJa6LlrLkWSS7aev0g25zB_4zWPeI-QzZ1ecCbjmV2otGLwjK86kbIDz9QlZMcagEarnH8hpzn_q2rcAK1IeQkm4G3_vaHIBn7GMcaIx2zGE4-yTe1zcZA_0cplpiRQY3d79_Uajpy934UDnZoizG-gWN_m6lrDJdL-EMs7B0ccFp7Ls6ZMLgQbMLuWP5L3HkN2n135GHm6__7q5a-5_bn_cbO4bC1KUxjDfDhKUMOj9INd8gA6s9aIfwCIDaK0ZsG-VUcZwr9AAtwAojKj-vIEz8uWoG3MZdfVUnN3ZOE3OFi06LtVaVujiCM0pVqO56P2YbX0WJxeXrNuuU10n2gp-PYI2xZyT83pO4x7TQXOmX6LXXP-PvpLnr5KYLQafcLJjfsNlL_uuVfAP0LKC2Q</recordid><startdate>19870713</startdate><enddate>19870713</enddate><creator>UOMI, K</creator><creator>MISHIMA, T</creator><creator>CHINONE, N</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19870713</creationdate><title>Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/GaAlAs multiple quantum well lasers</title><author>UOMI, K ; MISHIMA, T ; CHINONE, N</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c376t-b0f2d7396baffd781d343ccf65d3ca0332cbda529b9bb1f9ab31c33a6b6000fb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>ALKALINE EARTH METALS</topic><topic>ALUMINIUM ARSENIDES</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>AMPLIFICATION</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>BERYLLIUM</topic><topic>ELECTRON DENSITY</topic><topic>ELEMENTS</topic><topic>ENERGY</topic><topic>ENGINEERING</topic><topic>EPITAXY</topic><topic>Exact sciences and technology</topic><topic>FABRICATION</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>GAIN</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>HOLES</topic><topic>LASERS</topic><topic>METALS</topic><topic>MODULATION</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>Optics</topic><topic>OSCILLATIONS</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>RELAXATION</topic><topic>SEMICONDUCTOR DEVICES 420300 -- Engineering-- Lasers-- (-1989)</topic><topic>SEMICONDUCTOR LASERS</topic><topic>Semiconductor lasers; laser diodes</topic><topic>THRESHOLD ENERGY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>UOMI, K</creatorcontrib><creatorcontrib>MISHIMA, T</creatorcontrib><creatorcontrib>CHINONE, N</creatorcontrib><creatorcontrib>Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>UOMI, K</au><au>MISHIMA, T</au><au>CHINONE, N</au><aucorp>Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/GaAlAs multiple quantum well lasers</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1987-07-13</date><risdate>1987</risdate><volume>51</volume><issue>2</issue><spage>78</spage><epage>80</epage><pages>78-80</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We have demonstrated a relaxation oscillation frequency (fr) of up to 30 GHz in highly p-doped (Be=1×1019 cm−3) GaAs/GaAlAs multiple quantum well (MQW) lasers grown by molecular beam epitaxy. This is the highest fr achieved at room temperature for III-V semiconductor lasers. The high fr is attained by the large differential gain in the p-doped MQW structure having a low threshold electron density resulted from the excess hole density in addition to the quantum size effect.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.98603</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Appl. Phys. Lett.; (United States), 1987-07, Vol.51 (2), p.78-80 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24494462 |
| source | AIP Digital Archive |
| subjects | ALKALINE EARTH METALS ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS AMPLIFICATION ARSENIC COMPOUNDS ARSENIDES BERYLLIUM ELECTRON DENSITY ELEMENTS ENERGY ENGINEERING EPITAXY Exact sciences and technology FABRICATION Fundamental areas of phenomenology (including applications) GAIN GALLIUM ARSENIDES GALLIUM COMPOUNDS HOLES LASERS METALS MODULATION MOLECULAR BEAM EPITAXY Optics OSCILLATIONS Physics PNICTIDES RELAXATION SEMICONDUCTOR DEVICES 420300 -- Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS Semiconductor lasers laser diodes THRESHOLD ENERGY |
| title | Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/GaAlAs multiple quantum well lasers |
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