Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/GaAlAs multiple quantum well lasers

Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/GaAlAs multiple quantum well lasers

We have demonstrated a relaxation oscillation frequency (fr) of up to 30 GHz in highly p-doped (Be=1×1019 cm−3) GaAs/GaAlAs multiple quantum well (MQW) lasers grown by molecular beam epitaxy. This is the highest fr achieved at room temperature for III-V semiconductor lasers. The high fr is attained...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1987-07, Vol.51 (2), p.78-80
Hauptverfasser: UOMI, K, MISHIMA, T, CHINONE, N
Format: Artikel
Sprache:eng
Schlagworte:
ALKALINE EARTH METALS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM
ELECTRON DENSITY
ELEMENTS
ENERGY
ENGINEERING
EPITAXY
Exact sciences and technology
FABRICATION
Fundamental areas of phenomenology (including applications)
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOLES
LASERS
METALS
MODULATION
MOLECULAR BEAM EPITAXY
Optics
OSCILLATIONS
Physics
PNICTIDES
RELAXATION
SEMICONDUCTOR DEVICES 420300 > Engineering-- Lasers-- (-1989)
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
THRESHOLD ENERGY
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Beschreibung
Zusammenfassung:We have demonstrated a relaxation oscillation frequency (fr) of up to 30 GHz in highly p-doped (Be=1×1019 cm−3) GaAs/GaAlAs multiple quantum well (MQW) lasers grown by molecular beam epitaxy. This is the highest fr achieved at room temperature for III-V semiconductor lasers. The high fr is attained by the large differential gain in the p-doped MQW structure having a low threshold electron density resulted from the excess hole density in addition to the quantum size effect.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.98603