High power, AlGaAs buried heterostructure lasers with flared waveguides

High power, AlGaAs buried heterostructure lasers with flared waveguides

High power, buried heterostructure laser with flared waveguide horns have been grown by a two-step metalorganic chemical vapor deposition process. Powers up to 120 mW cw in a single longitudinal and transverse mode have been obtained from a single stripe laser. The flared waveguides decrease the lat...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1987-02, Vol.50 (5), p.233-235
Hauptverfasser: WELCH, D. F, CROSS, P. S, SCIFRES, D. R, STREIFER, W, BURNHAM, R. D
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DATA
DEPOSITION
ELECTRIC CURRENTS
ENGINEERING
Exact sciences and technology
EXPERIMENTAL DATA
FABRICATION
Fundamental areas of phenomenology (including applications)
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
Optics
Physics
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
SURFACE COATING 420300 > Engineering-- Lasers-- (-1989)
THRESHOLD CURRENT
WAVEGUIDES
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Beschreibung
Zusammenfassung:High power, buried heterostructure laser with flared waveguide horns have been grown by a two-step metalorganic chemical vapor deposition process. Powers up to 120 mW cw in a single longitudinal and transverse mode have been obtained from a single stripe laser. The flared waveguides decrease the lateral far-field divergence from 25° to 11° while supporting only the lowest order transverse mode.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.98237