High power, high efficiency window buried heterostructure GaAlAs superluminescent diode with an integrated absorber

A superluminescent diode (SLD) based on a proven high power, high efficiency ‘‘window-’’ type index-guided buried heterostructure laser is demonstrated. Lasing is suppressed for SLD operation by antireflection coating and by incorporating an unpumped absorber section. The resulting device emits high...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1987-12, Vol.51 (23), p.1879-1881
Hauptverfasser:	KWONG, N. S. K, LAU, K. Y, NADAV BAR-CHAIM, LEE, K. J
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS Applied sciences ARSENIC COMPOUNDS ARSENIDES DATA EFFICIENCY Electronics EMISSION ENERGY-LEVEL TRANSITIONS ENGINEERING Exact sciences and technology EXPERIMENTAL DATA FIBER OPTICS GALLIUM ARSENIDES GALLIUM COMPOUNDS INFORMATION LASERS NUMERICAL DATA OPERATION Optoelectronic devices PHOTON EMISSION PNICTIDES POWER SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SEMICONDUCTOR LASERS STIMULATED EMISSION 420300 > Engineering-- Lasers-- (-1989) SUPERRADIANCE
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Beschreibung
Zusammenfassung:	A superluminescent diode (SLD) based on a proven high power, high efficiency ‘‘window-’’ type index-guided buried heterostructure laser is demonstrated. Lasing is suppressed for SLD operation by antireflection coating and by incorporating an unpumped absorber section. The resulting device emits high optical power (14 mW) in the SLD mode at very low injection current (50 mA). The spectral modulation depth is below 14% over the entire emission spectral bandwidth of 20 nm, with a symmetrical beam divergence (20°×40°) and a stable transverse mode.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.98498