Visualization of defects in GaAs by oxidation in water

Boiling GaAs wafers in deionized water creates oxide films on their surfaces. The thickness and color of the film depends upon the defect density in the wafer. The film thus depicts a pattern showing a good correspondence with the X-ray traverse topograph and etch pit pattern.

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Bibliographische Detailangaben
Veröffentlicht in:	Japanese Journal of Applied Physics 1984-06, Vol.23 (6), p.L377-L378
Hauptverfasser:	FUKUTA, K, YASUAMI, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Boiling GaAs wafers in deionized water creates oxide films on their surfaces. The thickness and color of the film depends upon the defect density in the wafer. The film thus depicts a pattern showing a good correspondence with the X-ray traverse topograph and etch pit pattern.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.23.l377