Transition from the bipolar to the bulk-barrier transistor

Transition from the bipolar to the bulk-barrier transistor

In a conventional bipolar transistor the current is limited by diffusion in the neutral base region. In the bulk-barrier transistor the current is determined by diffusion or thermionic emission over a potential barrier. This type of operation occurs in bipolar transistors if the width of the neutral...

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Veröffentlicht in:IEEE transactions on electron devices 1984-10, Vol.31 (10), p.1447-1454
Hauptverfasser: Mader, H., Muller, R.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Beschreibung
Zusammenfassung:In a conventional bipolar transistor the current is limited by diffusion in the neutral base region. In the bulk-barrier transistor the current is determined by diffusion or thermionic emission over a potential barrier. This type of operation occurs in bipolar transistors if the width of the neutral base is below a definite value. The limit between bipolar- and bulk-barrier mode is defined. The current voltage-characteristic as well as the small signal equivalent circuit are given.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1984.21731