Growth of Sb overlayers on GaAs(110)

The GaAs(110)-Sb system is studied with AES, EELS, LEED, ellipsometric spectroscopy and SEM. As indicated by EELS Sb atoms are adsorbed first on Ga sites. The AES spectra can be explained by assuming a simultaneous growth of multiple layers on top of a well ordered homogeneous first monolayer (MSM g...

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Veröffentlicht in:	Surface science 1987-04, Vol.182 (3), p.545-556
Hauptverfasser:	STRUMPLER, R, LUTH, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Exact sciences and technology General and physical chemistry Solid-gas interface Surface physical chemistry
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The GaAs(110)-Sb system is studied with AES, EELS, LEED, ellipsometric spectroscopy and SEM. As indicated by EELS Sb atoms are adsorbed first on Ga sites. The AES spectra can be explained by assuming a simultaneous growth of multiple layers on top of a well ordered homogeneous first monolayer (MSM growth mode). The results of ellipsometric spectroscopy confirm the inhomogeneity of the Sb-film as proposed by the MSM mode. Desorption experiments and EELS demonstrate a strong chemical bonding between the first Sb monolayer and the substrate.
ISSN:	0039-6028 1879-2758
DOI:	10.1016/0039-6028(87)90019-7