The Growth of Epitaxial Layers of Ga sub 0.47 In sub 0.53 As by the Vapor-Phase Epitaxy-Hydride Method Using a Gallium--Indium Alloy Source

Epitaxial structures of the ternary system, Ga sub 0.47 In sub 0.53 As, have found wide application in the fields of optoelectronic and microwave devices. These epitaxial layers have been prepared by various techniques: liquid-phase epitaxy, vapor-phase epitaxy, molecular beam epitaxy and metal-orga...

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Veröffentlicht in:	Journal of the Electrochemical Society 1984-11, Vol.131 (11), p.2722-2725
Hauptverfasser:	Erstfeld, T E, Quinlan, K P
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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