The Growth of Epitaxial Layers of Ga sub 0.47 In sub 0.53 As by the Vapor-Phase Epitaxy-Hydride Method Using a Gallium--Indium Alloy Source

Epitaxial structures of the ternary system, Ga sub 0.47 In sub 0.53 As, have found wide application in the fields of optoelectronic and microwave devices. These epitaxial layers have been prepared by various techniques: liquid-phase epitaxy, vapor-phase epitaxy, molecular beam epitaxy and metal-organic chemical vapor deposition. All these methods have produced Ga sub x In sub 1--x As layers with room-temp. mobilities in the 10 000 cm exp 2 /V-s range, with a high of 13 000 cm exp 2 /V-s for the liquid-phase epitaxy. A study of the preparation of Ga sub x In sub 1--x As ternaries using an alloy source (Ga--In) with the VPE-hydride technique was carried out to evaluate the technique. The effect of various parameters, e.g. source composition, hydrogen chloride pressure, deposition temp. and operation time, on the ternary compositions and growth rates is reported. 25 ref.--AA