A eutectic dislocation etch for gallium arsenide

A eutectic etchant consisting of 50 mole % KOH and 50 mole % NaOH has been developed having a melting point of 170 deg C. The etchant has an etch rate on < 100 > GaAs of 0.2 mu m/min at 325 deg C and is useful on < 111 > and < 100 > surfaces. The etchant reveals structures not deve...

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Veröffentlicht in:	Journal of electronic materials 1984-09, Vol.13 (5), p.733-739
Hauptverfasser:	LESSOFF, H, GORMAN, R
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) Exact sciences and technology Physics Structure of solids and liquids crystallography
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Zusammenfassung:	A eutectic etchant consisting of 50 mole % KOH and 50 mole % NaOH has been developed having a melting point of 170 deg C. The etchant has an etch rate on < 100 > GaAs of 0.2 mu m/min at 325 deg C and is useful on < 111 > and < 100 > surfaces. The etchant reveals structures not developed with the molten KOH etchant. 9 ref.--AA
ISSN:	0361-5235 1543-186X
DOI:	10.1007/BF02657922