AES and ELS Study of Gold Deposition on Top of Hydrogen Saturated Silicon (111) Surfaces

AES and ELS Study of Gold Deposition on Top of Hydrogen Saturated Silicon (111) Surfaces

Gold was deposited on top of hydrogen saturated Si(111) clean surfaces. The electronic nature and atomic intermixing between gold overlayer and silicon substrate were studied by AES and ELS. It is claimed that there is a critical thickness ( approx 2 ML), where 1 ML = 7.8 x 10 exp 14 atoms/cm exp 2...

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Veröffentlicht in:Solid state communications 1984-08, Vol.51 (7), p.561-564
Hauptverfasser: Iwami, M, Nishikuni, M, Okuno, K, Hiraki, A
Format: Artikel
Sprache:eng
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Zusammenfassung:Gold was deposited on top of hydrogen saturated Si(111) clean surfaces. The electronic nature and atomic intermixing between gold overlayer and silicon substrate were studied by AES and ELS. It is claimed that there is a critical thickness ( approx 2 ML), where 1 ML = 7.8 x 10 exp 14 atoms/cm exp 2 for Si(111), for gold to induce alloyed metallic overlayer formation on the surface of a specimen due to intermixing reaction independent of whether a surface of Si(111) substrate is saturated with hydrogen atoms or not. 11 ref.--AA
ISSN:0038-1098