Characterisation of nitrides prepared by ion beam enhanced deposition of aluminium, silicon and titanium

The composition and ultramicrohardness of thin films deposited by electron beam evaporation of aluminium, silicon and titanium, with a simultaneous 20 keV nitrogen ion bombardment, were investigated. The friction coefficient and wear resistance against steel were also measured. Only \leqslant50% of...

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Veröffentlicht in:Japanese Journal of Applied Physics 1987-06, Vol.26 (6), p.856-862
Hauptverfasser: FATKIN, J, KOHNO, A, KANEKAMA, N
Format: Artikel
Sprache:eng
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Zusammenfassung:The composition and ultramicrohardness of thin films deposited by electron beam evaporation of aluminium, silicon and titanium, with a simultaneous 20 keV nitrogen ion bombardment, were investigated. The friction coefficient and wear resistance against steel were also measured. Only \leqslant50% of the incident nitrogen ions were incorporated during deposition. Under our experimental conditions, titanium oxycarbonitride and aluminium-nitrogen films containing 10–20% oxide were formed. Silicon reacted to produce a relatively pure substoichiometric SiN x random bonding alloy, which showed excellent wear resistance. Titanium oxycarbonitride films exhibited low friction against steel and a hardnesses approaching that of bulk TiN.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.26.856