High Performance and Efficiency Resonant Photo-Effect-Transistor by Near-Field Nano-Strip-Controlled Organic Light Emitting Diode Gate

Phototriggered devices have attracted attention due to their exceptional characteristics, advanced multifunctionalities and unprecedented applications in optoelectronic systems. Here, we report a pioneer structural device, a resonant photoeffect-transistor (RPET) with a functionalized nanowire (NW) charge transport channel, modulated by a near-field nanostrip organic light emitting diode (OLED) and controlled by a gate bias to realize exceptional photoelectric properties. The RPET presents high-quality nanowire channel characteristics due to tunable optical cavities manifesting strong standing wave resonance under controlled light emission. To enhance performance, methodical analyses were carried out to determine the effects of the structural design, electric field distribution and charge carrier generation on photoresponsivity when light traverses a single or multiple nanoslit masks. The developed RPET yields stable photocurrents in the 105 range and generates current on/off ratios upward of 106 under the influence of intense electromagnetic distribution, effectively lending itself to promising opportunities in fully integrated optoelectronic devices.