Photon-assisted dry etching of GaAs

Photon-assisted dry etching of GaAs

UV radiation from an ArF laser has been used to perform large-area etching of single-crystal GaAs. The process is based on photochemical production of methyl or trifluoromethyl, and bromine radicals. The etching is anisotropic and features

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Veröffentlicht in:Applied physics letters 1984-08, Vol.45 (4), p.475-477
Hauptverfasser: BREWER, P, HALLE, S, OSGOOD, R. M. JR
Format: Artikel
Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 477
container_issue 4
container_start_page 475
container_title Applied physics letters
container_volume 45
creator BREWER, P
HALLE, S
OSGOOD, R. M. JR
description UV radiation from an ArF laser has been used to perform large-area etching of single-crystal GaAs. The process is based on photochemical production of methyl or trifluoromethyl, and bromine radicals. The etching is anisotropic and features
doi_str_mv 10.1063/1.95221
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ispartof Applied physics letters, 1984-08, Vol.45 (4), p.475-477
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1077-3118
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source AIP Digital Archive
subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Photon-assisted dry etching of GaAs
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