Photon-assisted dry etching of GaAs

UV radiation from an ArF laser has been used to perform large-area etching of single-crystal GaAs. The process is based on photochemical production of methyl or trifluoromethyl, and bromine radicals. The etching is anisotropic and features

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Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1984-08, Vol.45 (4), p.475-477
Hauptverfasser:	BREWER, P, HALLE, S, OSGOOD, R. M. JR
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	UV radiation from an ArF laser has been used to perform large-area etching of single-crystal GaAs. The process is based on photochemical production of methyl or trifluoromethyl, and bromine radicals. The etching is anisotropic and features
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.95221